A First Principal Investigation of the Computational Correlation Effect of Mg Concentration on AlSb
DOI:
https://doi.org/10.51846/ijpms.v1i02.3777Keywords:
Mg-doped semi-conductors, Antimonides, III-V Semiconductors, Electronic propertiesAbstract
The structural and electrical properties of Al1-xMgxSb are determined by employing density functional theory (DFT) and the Exchange-Correlation Approximation (EC) with varying the Mg concentration (x = 0, 0.25, 0.5, 0.75). In order to compute structural properties including lattice parameters), (B bulk modulus), and B0 (derivative of B) that are in fair concurrence with the theoretical and experimental results, generalized gradient approximation (GGA-PBE) is used. The electronic properties such as band structure (BS) and density of states (DOS) are found utilizing the (GGA-PBE) algorithm. These calculations exhibit the indirect bandgap of pure AlSb. As the ratio of AlSb increases, the material’s bandgap reduces and changes into direct bandgap (Γ-L) from indirect bandgap.